TE28F400BX-B80

4Mbit 256K X 16, 512K X 8 BOOT BLOCK FLASH MEMORY FAMILY

PRODUCT FAMILY OVERVIEW

Throughout this datasheet the 28F400BX refers to both the 28F400BX-T and 28F400BX-B devices and 28F004BX refers to both the 28F004BX-T and 28F004BX-B devices. The 4-Mbit flash memory family refers to both the 28F400BX and 28F004BX products. This datasheet comprises the specifications for four separate products in the 4-Mbit flash memory family. Section 1 provides an overview of the 4-Mbit flash memory family including applications, pinouts and pin descriptions.

x8/x16 Input/Output Architecture

   28F400BX-T, 28F400BX-B

   For High Performance and High

Integration 16-bit and 32-bit CPUs

x8-only Input/Output Architecture

   28F004BX-T, 28F004BX-B

   For Space Constrained 8-bit Applications

Upgradeable to ’s Smart Voltage Products

Optimized High-Density Blocked Architecture

   One 16-KB Protected Boot Block

   Two 8-KB Parameter Blocks

   One 96-KB Main Block

   Three 128-KB Main Blocks

   Top or Bottom Boot Locations

Extended Cycling Capability

   100,000 Block Erase Cycles

Automated Word/Byte Write and Block Erase

   Command User Interface

   Status Registers

   Erase Suspend Capability

SRAM-Compatible Write Interface

Automatic Power Savings Feature

   1 mA Typical ICC Active Current in Static Operation

Very High-Performance Read

   60/80/120 ns Maximum Access Time

   30/40/40 ns Maximum Output Enable Time

Low Power Consumption

   20 mA Typical Active Read Current

Reset/Deep Power-Down Input

   0.2 mA ICC Typical

   Acts as Reset for Boot Operations

Extended Temperature Operation

   b40§C to a85§C

Write Protection for Boot Block

Hardware Data Protection Feature

   Erase/Write Lockout During Power Transitions

Industry Standard Surface Mount Packaging

   28F400BX: JEDEC ROM Compatible

    44-Lead PSOP

    56-Lead TSOP

   28F004BX: 40-Lead TSOP

12V Word/Byte Write and Block Erase

   VPP e 12V g5% Standard

   VPP e 12V g10% Option

ETOXTM III Flash Technology

   5V Read