MRF8S18120HSR3
RF Power Transistor,1805 to 1880MHz, 120W, Typ Gain in dB is 18.2 @ 1805MHz, 28V, LDMOS, SOT1793
Overview
The MRF8S18120HR3 and are designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
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## Features
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Optimized for Doherty Applications
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.
## Features RF Performance Tables
### 1800 MHz
Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- *
\---|---|---
1805 MHz| 18.2| 49.8
1840 MHz| 18.6| 51.4
1880 MHz| 18.7| 53.9
* Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power 3 dB Input Overdrive from Rated Pout
* Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW
### 1800 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **SR1
@ 400 kHz
dBc- .
- * | **SR2
@ 600 kHz
dBc- .
- * | **EVM
- .
- *
\---|---|---|---|---|---
1805 MHz| 17.9| 41.0| –64| –76| 1.6
1840 MHz| 18.2| 41.9| –63| –76| 1.7
1880 MHz| 18.3| 43.2| –61| –76| 2.0
