RN1901FE

RN1901FE NPN+NPN复合带阻尼三极管 50V 100mA HEF=30 R1=R2=4.7KΩ 100mW/0.1W SOT-563/ES6 标记XK 开关电路 逆变器 接口电路 驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V 集电极连续输出电流IC Collector CurrentIC | 100mA Q1基极输入电阻R1 Input ResistanceR1 | 4.7KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 4.7KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio | 1 Q2基极输入电阻R1 Input ResistanceR1 | 4.7KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 4.7KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio | 1 直流电流增益hFE DC Current GainhFE | 30 截止频率fT Transtion FrequencyfT | 250MHz 耗散功率Pc Power Dissipation | 100mW/0.1W Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Bias Resistor Built-in Transistor • Two devices are incorporated into an Extreme-Super-Mini 6-pin package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN2901FE to RN2906FE APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用 | 特点 •的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管）•两个设备都纳入一个极端超迷你（6针）封装。 •将偏置电阻晶体管，减少了部件数量。减少部件数量，使能制造的更加紧凑的设备，并降低装配成本。 •互补RN2901FE的到RN2906FE 应用 •开关，逆变电路，接口电路和驱动器电路应用