PTF080901F

LDMOS射频功率场效应晶体管90 W， 869-960兆赫 LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Features

• Broadband internal matching

• Typical EDGE performance

\- Average output power = 45 W

\- Gain = 18 dB

\- Efficiency = 40%

• Typical CW performance

\- Output power at P–1dB = 120 W

\- Gain = 17 dB

\- Efficiency = 60%

• Integrated ESD protection: Human Body Model, Class 1 minimum

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V, 90 W CW output power