AISM-1210-R56M-T

1210 560nH ±20% 450mA

560nH Unshielded Molded Inductor 450mA 550mOhm Max 1210 3225 Metric

得捷:
FIXED IND 560NH 450MA 550MOHM SM

艾睿:
Inductor RF Molded Wirewound 0.56uH 20% 25.2MHz 30Q-Factor 0.45A 0.55Ohm DCR 1210 T/R

安富利:
Ind Chip Molded Wirewound 560nH 20% 25.2MHz 30Q-Factor 450mA 1210 T/R

Chip1Stop:
Ind Chip Molded Wirewound 560nH 20% 25.2MHz 30Q-Factor 450mA 3.2 x 2.5 mm T/R