BFS17WH6327XTSA1

晶体管 双极-射频, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, 20 hFE

Look no further than the RF bi-polar junction transistor, developed by Technologies, which can offer high radio frequency power compatibility. This product"s minimum DC current gain is 40@2mA@1 V|20@25mA@1V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.