IPB600N25N3GATMA1

INFINEON  IPB600N25N3GATMA1  晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 250V 25A D2PAK

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB600N25N3GATMA1, 25 A, Vds=250 V, 3引脚 D2PAK TO-263封装

贸泽:
MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3

e络盟:
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V

艾睿:
This IPB600N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 250V 25A 3-Pin2+Tab TO-263

TME:
Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3

Verical:
Trans MOSFET N-CH 250V 25A 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB600N25N3GATMA1  MOSFET Transistor, N Channel, 25 A, 250 V, 0.051 ohm, 10 V, 3 V

Win Source:
MOSFET N-CH 250V 25A D2PAK / N-Channel 250 V 25A Tc 136W Tc Surface Mount PG-TO263-3