BUK9Y19-75B

NXP  BUK9Y19-75B  晶体管, MOSFET, N沟道, 48.2 A, 75 V, 0.0147 ohm, 10 V, 1.65 V

The is a N-channel enhancement-mode logic level FET in a plastic package using TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in automotive critical applications.

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Low conduction losses due to low ON-state resistance

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Suitable for logic level gate drive sources

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Suitable for thermally demanding environments due to 175°C rating

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-55 to 175°C Junction temperature range