MS1000

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION:

The is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.

Features

·  30 MHz

·  28 VOLTS

·  IMD = -30 dB

·  GOLD METALLIZATION

·  POUT= 125 WATTS

·  GP= 15dB MINIMUM

·  COMMON EMITTER CONFIGURATION