IS42RM16160D-7BLI-TR

Ic Sdram 256Mbit 143MHz 54bga

SDRAM - 移动 存储器 IC 256Mb（16M x 16） 并联 54-TFBGA（8x13）

得捷:
IC DRAM 256MBIT PAR 54TFBGA

贸泽:
DRAM 256M 16Mx16 143MHz Mobile SDRAM, 2.5v

艾睿:
256M, 2.5V, MOBILE SDRAM, 16MX16, 143MHZ, 54 BALL BGA 8MMX13MM ROHS, IT, T&a;R

安富利:
ISSI"s 256Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture. All input and output signals the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.ISSI’s 256Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V – 2.5V VDD and 3.3V – 2.5V VDDQ memory systems containing 268,435,456 bits. Internally configured as a quad-bank DRAM with a synchronous interface. The 256Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL VDD = 3.3V or LVCMOS VDD = 2.5V compatible. The 256Mb SDRAM has the ability to synchronously burst data at a high data rate