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M93C76-BN6

电可擦除可编程只读存储器 8K 1Kx8 or 512x16

Description

The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory EEPROM devices. They are accessed through a Serial Data input D and Serial Data output Q using the MICROWIRE bus protocol

Features

● Industry standard MICROWIRE bus

● Single supply voltage:

   – 4.5 V to 5.5 V for M93Cx6

   – 2.5 V to 5.5 V for M93Cx6-W

   – 1.8 V to 5.5 V for M93Cx6-R

● Dual organization: by word x16 or byte x8

● Programming instructions that work on: byte, word or entire memory

● Self-timed programming cycle with auto erase: 5 ms

● READY/BUSY signal during programming

● 2 MHz clock rate

● Sequential read operation

● Enhanced ESD/latch-up behavior

● More than 1 million write cycles

● More than 40 year data retention

● Packages

   – ECOPACK® RoHS compliant

M93C76-BN6 PDF数据文档
图片 型号 厂商 下载
M93C76-BN6 ST Microelectronics 意法半导体
M93C46-WMN6TP ST Microelectronics 意法半导体
M93C46-WDW6TP ST Microelectronics 意法半导体
M93C56-WDW6TP ST Microelectronics 意法半导体
M93C56-RMN6TP ST Microelectronics 意法半导体
M93C86-WMN6TP ST Microelectronics 意法半导体
M93C66-RMC6TG ST Microelectronics 意法半导体
M93C46-WBN6P ST Microelectronics 意法半导体
M93C66-WMN6TP ST Microelectronics 意法半导体
M93C86-MN6P ST Microelectronics 意法半导体
M93C76-RDW6TP ST Microelectronics 意法半导体