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AM29LV081B-90EC

NOR Flash Parallel 3V/3.3V 8Mbit 1M x 8Bit 90ns 40Pin TSOP

GENERAL DESCRIPTION

The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is

offered in a 40-pin TSOP package. The byte-wide x8 data appears on DQ7–DQ0. This device requires only

a single, 3.0 volt VCCsupply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS

■Single power supply operation

— 2.7 to 3.6 volt read and write operations for battery-powered applications

■Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29LV081 device

■High performance

— Access times as fast as 70 ns

■Ultra low power consumption typical values at 5 MHz

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■Flexible sector architecture

— Sixteen 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

  A hardware method of locking a sector to prevent any program or erase operations within that sector

  Sectors can be locked in-system or via programming equipment

  Temporary Sector Unprotect feature allows code changes in previously locked sectors

■Unlock Bypass Program Command

— Reduces overall programming time when issuing multiple program command sequences

■Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■Minimum 1,000,000 write cycle guarantee per sector

■20-year data retention at 125°C

— Reliable operation for the life of the system

■Package option

— 40-pin TSOP

■Compatibility with JEDEC standards

— Pinout and software compatible with single power supply Flash

— Superior inadvertent write protection

■Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■Ready/Busy# pin RY/BY#

— Provides a hardware method of detecting program or erase cycle completion

■Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

■Hardware reset pin RESET#

— Hardware method to reset the device to reading array data

■Command sequence optimized for mass storage

— Specific addresses not required for unlock cycles

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