CSD19531Q5AT

TEXAS INSTRUMENTS  CSD19531Q5AT  晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V

N 通道 NexFET™ 功率 MOSFET，Texas Instruments

### MOSFET ，Texas Instruments

欧时:
Texas Instruments NexFET 系列 Si N沟道 MOSFET CSD19531Q5AT, 110 A, Vds=100 V, 8引脚 VSON封装

得捷:
MOSFET N-CH 100V 100A 8VSON

立创商城:
CSD19531Q5AT

德州仪器TI:
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm

e络盟:
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V

艾睿:
This CSD19531Q5AT power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 3300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 100V 16A 8-Pin 8VSON T/R

Chip1Stop:
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 100A; 125W; VSONP8 5x6mm

Verical:
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R

Newark:
# TEXAS INSTRUMENTS  CSD19531Q5AT  MOSFET Transistor, N Channel, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V