SIR172DP-T1-GE3
VISHAY SIR172DP-T1-GE3 晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0074 ohm, 10 V, 2.5 V
The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for high-side switch applications.
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- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
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- Optimized for high-side synchronous rectifier operation
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- 100% Rg tested
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- 100% UIS tested
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- Halogen-free
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- -55 to 150°C Operating temperature range