S29GL016A10BAIR13

64 Megabit, 32 Megabit, and 16 Megabit 3V only Page Mode Flash Memory Featuring 200nm MirrorBit Process Technology

General Description

The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics

Architectural Advantages

„Single power supply operation

– 3-Volt read, erase, and program operations

„Manufactured on 200 nm MirrorBit process technology

„Secured Silicon Sector region

– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence

– May be programmed and locked at the factory or by the customer „Flexible sector architecture

– 64Mb uniform sector models: 128 32 Kword 64 KB sectors

– 64 Mb boot sector models: 127 32 Kword 64 KB sectors

   + 8 4Kword 8KB boot sectors

– 32 Mb uniform sector models: 64 32Kword 64 KB sectors

– 32 Mb boot sector models: 63 32Kword 64 KB sectors

  + 8 4Kword 8KB boot sectors

– 16 Mb boot sector models: 31 31Kword 64 KB sectors

  + 8 4Kword 8 KB boot sectors

„Compatibility with JEDEC standards

– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „

100,000 erase cycles typical per sector

„20-year data retention typical

Performance Characteristics

„High performance

– 90 ns access time

– 4-word/8-byte page read buffer

– 25 ns page read times

– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates

„Low power consumption typical values at 3.0 V, 5 MHz

  – 18 mA typical active read current

  – 50 mA typical erase/program current

  – 1 µA typical standby mode current

„Package options

  – 48-pin TSOP

  – 56-pin TSOP

  – 64-ball Fortified BGA

  – 48-ball fine-pitch BGA

  – 56-ball fine pitch BGA MCP-compatible for cellular handsets