TSHA4401
VISHAY TSHA4401 红外发射器, 高速, 20 °, T-1 3mm, 100 mA, 1.5 V, 600 ns, 600 ns
The is an Infrared Emitting Diode in GaAlAs technology, moulded in a clear, untinted plastic package. It is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorption of 875nm radiation in glass.
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- High reliability
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- ϕ = ±20° Angle of half intensity
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- Low forward voltage
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- Suitable for high pulse current operation
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- Good spectral matching with Si photodetectors