IPB65R190C6ATMA1

D2PAK N-CH 700V 20.2A

表面贴装型 N 通道 20.2A（Tc） 151W（Tc） D²PAK（TO-263AB）

得捷:
MOSFET N-CH 650V 20.2A D2PAK

贸泽:
MOSFET HIGH POWER_LEGACY

艾睿:
Make an effective common source amplifier using this IPB65R190C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 151000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
PMCspan board, Secondary PMC expansion for PMCSPAN26E-002 w/IEEE handles, 6E

TME:
Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO263-3

Verical:
Trans MOSFET N-CH 700V 20.2A 3-Pin2+Tab D2PAK T/R

Win Source:
MOSFET N-CH 650V 20.2A D2PAK / N-Channel 650 V 20.2A Tc 151W Tc Surface Mount PG-TO263-3