BAR 81W H6327
INFINEON BAR 81W H6327 二极管, 射频/PIN, 单, 1 ohm, 30 V, SOT-343, 4引脚, 0.9 pF
The is a Silicon RF Switching Diode with shunt-diode configuration. It is designed for use in shunt configuration in high performance RF switches.
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- High shunt signal isolation
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- Low shunt insertion loss
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- Optimized for short - open transformation using λ/4 lines
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- -55 to 125°C Operating temperature range
