BUZ30AHXKSA1

Infineon SIPMOS 系列 Si N沟道 MOSFET BUZ30AHXKSA1, 21 A, Vds=200 V, 3引脚 TO-220封装

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 200V 21A TO220-3

欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BUZ30AHXKSA1, 21 A, Vds=200 V, 3引脚 TO-220封装

艾睿:
Create an effective common drain amplifier using this BUZ30AHXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes sipmos technology. This N channel MOSFET transistor operates in enhancement mode.

富昌:
Single N-Channel 200 V 130 mOhm SIPMOS® Power Mosfet - TO-220-3

Chip1Stop:
Trans MOSFET N-CH 200V 21A 3-Pin3+Tab TO-220 Tube

TME:
Transistor: N-MOSFET; unipolar; 200V; 21A; 125W; PG-TO220-3

Verical:
Trans MOSFET N-CH 200V 21A 3-Pin3+Tab TO-220 Tube