IRF9530PBF

VISHAY  IRF9530PBF  晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, -4 V

The is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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175°C Operating temperature

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Easy to parallel

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Simple drive requirement

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Fast switching