L6385E

STMICROELECTRONICS  L6385E  驱动器, IGBT, MOSFET, 高压侧和低压侧, -0.3V至17V电源, 650mA输出, 105ns延迟, DIP-8

MOSFET & IGBT 驱动器，STMicroelectronics

### MOSFET & IGBT 驱动器，STMicroelectronics

得捷:
IC GATE DRVR HALF-BRIDGE 8DIP

欧时:
STMicroelectronics L6385E 双 半桥 MOSFET 功率驱动器, 0.65A, 最大为 17 V电源, 8引脚 PDIP封装

e络盟:
驱动器, IGBT, MOSFET, 高压侧和低压侧, -0.3V至17V电源, 650mA输出, 105ns延迟, DIP-8

艾睿:
Ideal for high voltage transistors this L6385E power driver manufactured by STMicroelectronics will help switch junction. This device has a maximum propagation delay time of 110typ ns and a maximum power dissipation of 750 mW. Its maximum power dissipation is 750 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has a minimum operating temperature of -45 °C and a maximum of 125 °C. This device has a maximum of 17 V.

安富利:
MOSFET DRVR 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube

富昌:
L6385E 系列 17 V 400 mA 高压 高压侧和低压侧 驱动器 - DIP-8

Chip1Stop:
Driver 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube

TME:
Driver; 400mA; 580V; 750mW; Channels:2; 400kHz; DIP8; Package: tube

Verical:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin PDIP Tube

Newark:
DRIVER, MOSFET, IGBT, 600V, 0.65A, 8DIP

儒卓力:
**HaBr MOSvIGBTDr 600V DIP-8 THT **

Online Components:
Driver 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin PDIP Tube