SPB20N60S5

INFINEON  SPB20N60S5  功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V

The is a 600V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for general purpose applications.

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New revolutionary high voltage technology

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Extreme dV/dt rated

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Ultra low effective capacitance

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Qualified according to JEDEC for target applications

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Improved transconductance

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Innovative high voltage technology

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Worldwide best RDS ON

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Periodic avalanche rated