STY60NM50

STMICROELECTRONICS  STY60NM50  晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V

The is a MDmesh™ N-channel Zener-protected Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The proprietary strip technique yields overall dynamic performance that is significantly better. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

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0.045R RDS ON

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High dV/dt and avalanche capability

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Improved ESD capability

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Low input capacitance and gate charge

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Low gate input resistance

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Tight process control

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Lowest ON-resistance