GB10SLT12-252

GENESIC SEMICONDUCTOR GB10SLT12-252 Silicon Carbide Schottky Diode, 1200V Series, Single, 1.2kV, 10A, 52NC, TO-252

Diode Silicon Carbide Schottky 1200V 10A Surface Mount TO-252

得捷:
DIODE SCHOTTKY 1.2KV 10A TO252

艾睿:
If your circuit needs to adjust from an AC to DC voltage use a Schottky diode GB10SLT12-252 rectifier from GeneSiC Semiconductor. Its maximum power dissipation is 190000 mW. It is made in a single configuration. This rectifier has a minimum operating temperature of -55 °C and a maximum of 175 °C. Its peak non-repetitive surge current is 65 A, while its maximum continuous forward current is 10 A.

Newark:
# GENESIC SEMICONDUCTOR  GB10SLT12-252  Silicon Carbide Schottky Diode, 1200V Series, Single, 1.2 kV, 10 A, 52 nC, TO-252