IRF730APBF

VISHAY  IRF730APBF  晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4.5 V

The is a N-channel enhancement-mode Power MOSFET with low gate charge.

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Improved gate, avalanche and dynamic dV/dt ruggedness

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Fully characterized capacitance and avalanche voltage and current

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Effective COSS specified

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Simple drive requirements