A2V09H300-04NR3

RF Power Transistor,720 to 960MHz, 223W, Typ Gain in dB is 19.7 @ 940MHz, 48V, LDMOS, SOT1818

Overview

The 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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## Features

* Advanced High Performance In-Package Doherty

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction System

* RoHS Compliant

## Features RF Performance Tables

### 900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.2 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

920 MHz| 19.8| 55.1| 7.2| –32.7

940 MHz| 19.7| 55.9| 7.1| –33.4

960 MHz| 19.5| 56.1| 6.7| –33.9

### 800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.0 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

790 MHz| 18.4| 55.0| 7.6| –25.0

806 MHz| 18.9| 56.0| 8.0| –28.0

821 MHz| 18.1| 56.1| 8.0| –32.0