FQP50N06

FAIRCHILD SEMICONDUCTOR  FQP50N06  晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V

The is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using "s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This device is well suited for low voltage applications such as DC/DC converters, high efficiency switching for portable and battery operated products. This product is general usage and suitable for many different applications.

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Low gate charge

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100% Avalanche tested

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Improved dv/dt capability

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Switching loss improvements

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Lower conduction loss

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175°C Maximum junction temperature rating