AOD2N60

600V,2A,N沟道MOSFET

General Description

The & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDSon, Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply

designs.

VDS                               700V@150℃

ID at VGS=10V               2A

RDSON at VGS=10V     < 4.4Ω