IPD35N10S3L26ATMA1

INFINEON  IPD35N10S3L26ATMA1  晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V

IPD35N10S3L-26 是一款N沟道增强模式MOSFET, 具有低开关和传导功率损耗, 可实现高热能效率。

IPD35N10S3L-26, SP000386184

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AEC-Q101合规

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MSL1高达260°C峰值回流

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绿色设备

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100％经过雪崩测试

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坚固的包装, 良好的品质与可靠性

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优化的总栅极电荷, 仅需较小的驱动器输出级

欧时:
Infineon MOSFET IPD35N10S3L26ATMA1

得捷:
MOSFET N-CH 100V 35A TO252-31

立创商城:
N沟道 100V 35A

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPD35N10S3L26ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 71000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

Verical:
Trans MOSFET N-CH 100V 35A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD35N10S3L26ATMA1  MOSFET Transistor, N Channel, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V

Win Source:
MOSFET N-CH 100V 35A TO252-3