SCTWA50N120

Trans MOSFET N-CH SiC 1.2kV 65A 3Pin HIP-247 Tube

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

**Key Features**

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Very tight variation of on-resistance vs. temperature

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Very high operating junction temperature capability TJ = 200 °C

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Very fast and robust intrinsic body diode

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Low capacitance