IXFH36N60P

IXYS SEMICONDUCTOR  IXFH36N60P  功率场效应管, MOSFET, N沟道, 36 A, 600 V, 190 mohm, 10 V, 5 V

N 通道功率 MOSFET，IXYS HiperFET™ Polar™ 系列

IXYS N 通道功率 MOSFET，具有快速本征二极管 HiPerFET™

得捷:
MOSFET N-CH 600V 36A TO247AD

欧时:
### N 通道功率 MOSFET，IXYS HiperFET™ Polar™ 系列IXYS N 通道功率 MOSFET，具有快速本征二极管 HiPerFET™![http://china.rs-online.com/largeimages/LBIPOLAR-10.gif]http://china.rs-online.com/largeimages/LBIPOLAR-10.gif ### MOSFET 晶体管，IXYSIXYS 的一系列高级离散电源 MOSFET 设备

立创商城:
N沟道 600V 36A

e络盟:
晶体管, MOSFET, N沟道, 36 A, 600 V, 0.19 ohm, 10 V, 5 V

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFH36N60P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 650000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.

Chip1Stop:
Trans MOSFET N-CH 600V 36A 3-Pin3+Tab TO-247

Verical:
Trans MOSFET N-CH 600V 36A 3-Pin3+Tab TO-247AD

Newark:
# IXYS SEMICONDUCTOR  IXFH36N60P  Power MOSFET, N Channel, 36 A, 600 V, 190 mohm, 10 V, 5 V

Win Source:
MOSFET N-CH 600V 36A TO-247