BSO201SPHXUMA1

BSO201SP 系列 20 V 8 mOhm P沟道 OptiMOS® 功率 晶体管- PG-DSO-8

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSO201SPHXUMA1, 14.9 A, Vds=20 V, 8引脚 DSO封装

得捷:
MOSFET P-CH 20V 12A 8DSO

贸泽:
MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P

e络盟:
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV

艾睿:
Compared to traditional transistors, BSO201SPHXUMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 20V 14.9A 8-Pin DSO T/R

Chip1Stop:
Trans MOSFET P-CH 20V 14.9A Automotive 8-Pin DSO T/R

TME:
Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8

Verical:
Trans MOSFET P-CH 20V 12A Automotive 8-Pin DSO T/R

Newark:
# INFINEON  BSO201SPHXUMA1  MOSFET Transistor, P Channel, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV