FF225R17ME4P_B11
IGBT模块
Summary of Features:
- .
- Low V CEsat
- .
- T vj op = 150°C
- .
- Standard Housing
Benefits:
- .
- Compact Modules
- .
- Easy and most reliable assembly
- .
- No Plugs and Cables required
- .
- Ideal for Low Inductive System Designs
IGBT模块
Summary of Features:
Benefits:
图片 | 型号 | 厂商 | 下载 |
---|---|---|---|
![]() | FF225R17ME4P_B11 | Infineon 英飞凌 | |
![]() | FF225R12ME4_B11 | Infineon 英飞凌 | |
![]() | FF225R17ME4_B11 | Infineon 英飞凌 | |
![]() | FF225R17ME4B11BOSA1 | Infineon 英飞凌 | |
![]() | FF225R12ME4B11BPSA1 | Infineon 英飞凌 | |
![]() | FF225R12ME4BOSA1 | Infineon 英飞凌 | |
![]() | FF225R17ME4BOSA1 | Infineon 英飞凌 | |
![]() | FF225R17ME3BOSA1 | Infineon 英飞凌 | |
![]() | FF225R12MS4BOSA1 | Infineon 英飞凌 | |
![]() | FF225R17ME4PB11BPSA1 | Infineon 英飞凌 | |
![]() | FF225R17ME4PBPSA1 | Infineon 英飞凌 |