锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

MJD47T4

STMicroelectronics### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。

高电压,STMicroelectronics


得捷:
TRANS NPN 250V 1A DPAK


欧时:
STMicroelectronics MJD47T4 , NPN 晶体管, 1 A, Vce=250 V, HFE:10, 10 MHz, 3引脚 DPAK TO-252封装


贸泽:
双极晶体管 - 双极结型晶体管BJT NPN Hi-Volt Fast Sw


e络盟:
双极晶体管


艾睿:
This specially engineered NPN MJD47T4 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 15000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.


安富利:
Trans GP BJT NPN 250V 1A 3-Pin2+Tab DPAK T/R


Chip1Stop:
Trans GP BJT NPN 250V 1A 3-Pin2+Tab DPAK T/R


Verical:
Trans GP BJT NPN 250V 1A 15000mW 3-Pin2+Tab DPAK T/R


Newark:
# STMICROELECTRONICS  MJD47T4  Bipolar BJT Single Transistor, NPN, 250 V, 10 MHz, 15 W, 1 A, 150 hFE


Win Source:
TRANS NPN 250V 1A DPAK


MJD47T4 PDF数据文档
图片 型号 厂商 下载
MJD47T4 ST Microelectronics 意法半导体
MJD41CT4G ON Semiconductor 安森美
MJD44H11T4 ST Microelectronics 意法半导体
MJD44H11TM Fairchild 飞兆/仙童
MJD45H11TF Fairchild 飞兆/仙童
MJD45H11TM Fairchild 飞兆/仙童
MJD47T4G ON Semiconductor 安森美
MJD44H11T4G ON Semiconductor 安森美
MJD41CTF Fairchild 飞兆/仙童
MJD44H11-001 ON Semiconductor 安森美
MJD44E3T4G ON Semiconductor 安森美