BST120
BST120 P沟道MOS场效应管 -60V -300mA 6ohm SOT-89 marking/标记 LM 高速开关 无二次击穿
P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR very low Ron direct interface to C-MOS high-speed switching no second breakdown
BST120 P沟道MOS场效应管 -60V -300mA 6ohm SOT-89 marking/标记 LM 高速开关 无二次击穿
P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR very low Ron direct interface to C-MOS high-speed switching no second breakdown
图片 | 型号 | 厂商 | 下载 |
---|---|---|---|
![]() | BST120 | NXP 恩智浦 | |
![]() | BST15,115 | NXP 恩智浦 | |
![]() | BST16,115 | NXP 恩智浦 | |
![]() | BST12-0.7S06PCM | Bellnix | |
![]() | BST1003SM-03A | Intervox | |
![]() | BST1310SM-12-C | Intervox | |
![]() | BST16 | NXP 恩智浦 | |
![]() | BST15 | NXP 恩智浦 |