SI8483DB-T2-E1

VISHAY  SI8483DB-T2-E1  晶体管, MOSFET, P沟道, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV

* TrenchFET® power MOSFET * Ultra-small 1.5 mm x 1 mm maximum outline * Ultra-thin 0.59 mm maximum height

欧时:
### P 通道 Gen III MOSFET，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

艾睿:
Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R

安富利:
Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R