BCR35PN

NPN / PNP硅数字晶体管阵列 NPN/PNP Silicon Digital Transistor Array

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V/-50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V/-50V 集电极连续输出电流IC Collector CurrentIC| 100mA/-100mA Q1基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio| 0.21 Q2基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 47KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio| 0.21 直流电流增益hFE DC Current GainhFE| 70 截止频率fT Transtion FrequencyfT| 150MHz 耗散功率Pc Power Dissipation| 250mW/0.25W Description & Applications| Features •NPN/PNP Silicon Digital Transistor Array •Switching circuit, inverter, interface circuit,driver circuit •Two galvanic internal isolated NPN/PNPTransistors in one package •Built in bias resistor R1=10k , R2=47k 描述与应用| 特点 •NPN / PNP硅数字阵列 •开关电路，逆变器，接口电路，驱动电路 •（电流）的内部分离NPN/ PNPTransistors在一个包 •内置偏置电阻（R1=10K，R2=47K）