PMZB290UNE2
NXP PMZB290UNE2 晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
The is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
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- Low threshold voltage
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- Very fast switching
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- >2kV HBM ESD protection
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- Ultra-thin package profile of 0.37mm
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- -55 to 150°C Junction temperature range