FDH45N50F

500V N沟道MOSFET ， FRFET 500V N-Channel MOSFET, FRFET

Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features

• 45A, 500V, RDSon= 0.12Ω@VGS= 10 V

• Low gate charge typical 105 nC

•Low Crss

typical 62 pF

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability