TK4A60DBSTA4,Q

TOSHIBA  TK4A60DBSTA4,Q  功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V

The is a N-channel enhancement-mode Silicon MOSFET suitable for switching regulator applications.

.

Low drain-source ON resistance

.

High forward transfer admittance

.

Low leakage current

.

Enhancement-mode

Using continuously under heavy loads may cause this product to decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings.