AO6408

20V,8.8A,单N沟道MOSFET

最大源漏极电压VdsDrain-Source Voltage | 20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage | 12V 最大漏极电流IdDrain Current | 8.8A 源漏极导通电阻RdsDrain-Source On-State Resistance | 25.6mΩ@ VGS = 1.8V,ID =4A 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.5~1V 耗散功率PdPower Dissipation | 2W Description & Applications | N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent RDSON and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pbfree meets ROHS & Sony 259 specifications. AO6408L is a Green Product ordering option. AO6408 and AO6408L are electrically identical. 描述与应用 | N沟道增强型场效应 概述 AO6408采用先进沟道技术，提供优良的RDS（ON）和栅极电荷低。它提供了运行在很宽的范围从1.8V到12V的栅极驱动。这是ESD保护。这个装置是适合用于作为负载开关。标准产品AO6408是无铅认证（符合ROHS＆索尼259规格）。 AO6408L是一种绿色产品订购选项。 AO6408和AO6408L是电动相同。