PEMD3

NPN / PNP电阻配备晶体管; R1 = 10千欧， R2 = 10千欧 NPN/PNP resistor-equipped transistors; R1 = 10 kohm, R2 = 10 kohm

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO Q1/Q2 | 50V/-50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO Q1/Q2 | 50V/-50V 集电极连续输出电流IC Collector CurrentIC Q1/Q2 | 100mA/-100mA Q1基极输入电阻R1 Input ResistanceR1 | 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 10KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio | 1 Q2基极输入电阻R1 Input ResistanceR1 | 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 10KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio | 1 直流电流增益hFE DC Current GainhFE | 30 截止频率fT Transtion FrequencyfT Q1/Q2 | 耗散功率Pc Power Dissipation Q1/Q2 | 300mW/0.3W Description & Applications | Features • PNP/PNP resistor-equipped transistors; • 300 mW total power dissipation • Very small 1.6 mm x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. 描述与应用 | 特点 •PNP / PNP电阻配备晶体管; •300 mW的总功耗 •非常小的1.6毫米×1.2毫米的超薄封装 •优秀的共面性，由于直引线 •替换两个SC-75/SC-89包装相同的PCB面积上的晶体管 •减少所需PCB面积 •减少取放成本。 应用 •通用开关和放大 •逆变器和接口电路 •电路驱动。