IXFH52N30Q

IXYS SEMICONDUCTOR IXFH52N30Q 晶体管, MOSFET, HiPerFET, N沟道, 52 A, 300 V, 60 mohm, 10 V, 4 V

The is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode HiPerFET™. It features low static drain-to-source ON-resistance HDMOS™ process, low gate charge and capacitances.

.: Avalanche rating

.: High dV/dt rating

.: Low trr

.: International standard packages

.: Rugged polysilicon gate cell structure

.: Easy to mount

.: Space saving

.: High power density

.: UL94V-0 Flammability rating

IXFH52N30Q详细参数

IXFH52N30Q PDF数据文档

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