TSFF5210

VISHAY  TSFF5210..  红外发射器, 高速, 10 °, T-1 3/4 5mm, 100 mA, 1.5 V, 15 ns, 15 ns

The is a 870nm Infrared Emitting Diode in GaAlAs double hetero DH technology. It is moulded in a clear, untinted plastic package.

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High speed

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High reliability

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High radiant power

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High radiant intensity

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ϕ = ±10° Angle of half intensity

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Low forward voltage

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Suitable for high pulse current operation

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Good spectral matching with Si photodetectors

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12MHz High modulation bandwidth fc