LH28F016SUT-70

NOR Flash Parallel 3.3V/5V 16Mbit 2M/1M x 8Bit/16Bit 70ns 56Pin TSOP-I

INTRODUCTION

’s LH28F016SU 16M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5 V single voltage operation and very high read/write performance, the LH28F016SU is also the ideal choice for designing embedded mass storage memory systems.

DESCRIPTION

The LH28F016SU is a high performance 16M 16,777,216 bit block erasable non-volatile random access memory organized as either 1M × 16 or 2M × 8. The LH28F016SU includes thirty-two 64K 65,536 blocks or thirty-two 32-KW 32,768 blocks. A chip memory map is shown in Figure 4.

The implementation of a new architecture, with many enhanced features, will improve the device operating characteristics and results in greater product reliability and ease of use.

FEATURES

• User-Configurable x8 or x16 Operation

• User-Selectable 3.3 V or 5 V VCC

• 70 ns Maximum Access Time

• 0.32 MB/sec Write Transfer Rate

• 100,000 Erase Cycles per Block

• 32 Independently Lockable Blocks

• 5 V Write/Erase Operation 5 V VPP

   – No Requirement for DC/DC Converter to Write/Erase

• Minimum 2.7 V Read capability

   – 160 ns Maximum Access Time VCC = 2.7 V

• Revolutionary Architecture

   – Pipelined Command Execution

   – Write During Erase

   – Command Superset of Sharp LH28F008SA

• 5 µA Typ. ICC in CMOS Standby

• 1 µA Typ. Deep Power-Down

• State-of-the-Art 0.55 µm ETOX™ Flash Technology

• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP Type I Package