IXFC16N80P

ISOPLUS N-CH 800V 9A

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

Features

Silicon chip on Direct-Copper-Bond substrate

  - High power dissipation

  - Isolated mounting surface

  - 2500V electrical isolation

Low drain to tab capacitance<35pF

Low RDS on HDMOS™ process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching UIS rated

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode power supplies

DC choppers

AC motor control

Advantages

Easy assembly: no screws, or isolation foils required

Space savings

High power density

Low collector capacitance to ground low EMI