MOC8106SR2M

MOC8106M: 6 引脚 DIP 高 BV

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Features

---

 |

.

High BVCEO: 70 V Minimum CNY17XM, CNY17FXM, MOC8106M

.

Closely Matched Current Transfer Ratio CTR

.

Minimizes Unit-to-Unit Variation

.

Current Transfer Ratio In Select Groups

.

Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability CNY17FXM, MOC8106M

.

Safety and Regulatory Approvals:

.

UL1577, 4,170 VACRMS for 1 Minute

.

DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage