IRS2302STRPBF

半桥 IGBT MOSFET 灌:200mA 拉:350mA

Summary of Features:

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Floating channel designed for bootstrap operation

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Fully operational to +600 V

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Tolerant to negative transient voltage, dV/dt immune

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Gate drive supply range from 5 V to 20 V

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Undervoltage lockout for both channels

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Cross-conduction prevention logic

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3.3 V, 5 V and 15 V input logic compatible

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Matched propagation delay for both channels

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Outputs in phase with inputs

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Lower di/dt gate driver for better noise immunity