HSMS-286R-TR1G

HSMS-286R-TR1G 肖特基二极管 1mA 350mV/0.35V SOT-363/SC70-6 marking/标记 ZZ

反向电压VrReverse Voltage|

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平均整流电流IoAVerage Rectified Current| 1mA

最大正向压降VFForward VoltageVf | 350mV/0.35V

最大耗散功率PdPower dissipation|

Description & Applications| . Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. • High Detection Sensitivity: up to 50 mV/μW at 915 MHz up to 35 mV/μW at 2.45 GHz up to 25 mV/μW at 5.80 GHz • Low FIT Failure in Time Rate

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• HSMS-286K Grounded Center Leads Provide up to 10 dB Higher Isolation • Matched Diodes for Consistent Performance • Better Thermal Conductivity for Higher Power Dissipation •Surface Mount Microwave Schottky Detector Diodes • Ring Quad Schottky Barrier Diodes

描述与应用| 。Avago Technologies（安华高科技）的直流偏置检波二极管HSMS-286x系列的设计和优化，从915 MHz到5.8 GHz。他们是理想的RF/ ID和射频标签的应用，以及大信号检测，调制，射频到直流转换或电压倍增。 •检测灵敏度高：到50 mV/μW在915 MHz 高达35毫伏/μW在2.45GHz 高达25毫伏/μW在5.80 GHz •低FIT（故障时间）率

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•HSMS-286K接地中心信息提供多达高出10 dB的隔离 •一致的性能匹配二极管 •更好的导热性更高的功率耗散 •表面贴装微波肖特基检波二极管 •环四肖特基二极管