BSC011N03LSIATMA1
INFINEON BSC011N03LSIATMA1 晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
OptiMOS™ 功率 MOSFET 系列
OptiMOS™ 产品提供高性能封装,可处理最具挑战性的应用,在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。
N 通道 - 增强模式
符合汽车 AEC Q101 规格
MSL1 高达 260°C 峰值回流焊接
175°C 工作温度
绿色封装(无铅)
超低 Rdson
欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSC011N03LSIATMA1, 100 A, Vds=30 V, 8引脚 TDSON封装
得捷:
MOSFET N-CH 30V 37A/100A TDSON
贸泽:
MOSFET LV POWER MOS
艾睿:
This BSC011N03LSIATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
安富利:
Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP
TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC011N03LSIATMA1 MOSFET Transistor, N Channel, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V